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HN1A01FE-GR,LF
বর্ণনা:
HN1A01FE-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
শ্রেণী:
বিচ্ছিন্ন সেমিকন্ডাক্টর
বিশেষ উল্লেখ
Part Number:
HN1A01FE-GR,LF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN1A01FE-GR,LF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.06
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
PNP
Number of Pins:
6
Max Breakdown Voltage:
50 V
Max Power Dissipation:
100 mW
Emitter Base Voltage (VEBO):
-5 V
Collector Base Voltage (VCBO):
-50 V
Collector Emitter Breakdown Voltage:
50 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
2065 In Stock
Applications:
Test & measurement
Data storage
Wired networking
hFE Min:
120
Packaging:
Tape & Reel (TR)
Transition Frequency:
80 MHz
Max Collector Current:
150 mA
Gain Bandwidth Product:
80 MHz
Continuous Collector Current:
-150 mA
Collector Emitter Voltage (VCEO):
300 mV
Collector Emitter Saturation Voltage:
-300 mV
মডেল নম্বার:
HN1A01FE-GR,LF
পরিচিতি
HN1A01FE-GR,LF Overview\\\\nHN1A01FE-GR,LF is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN1A01FE-GR,LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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